Infineon Applied sciences AG provides its energy semiconductor gadgets to FOXESS, a fast-growing chief within the inexperienced power trade and a producer of inverters and power storage techniques. The 2 sides intention at selling the event of inexperienced power. Infineon will present FOXESS with its CoolSiC MOSFETs 1200 V, which will probably be used with EiceDRIVER gate drivers for industrial power storage purposes. On the similar time, FOXESS’ string PV inverters will use Infineon’s IGBT7 H7 1200 V energy semiconductor gadgets.
The worldwide marketplace for photovoltaic power storage techniques (PV-ES) has grown at a excessive pace within the final years. As competitors within the PV-ES market accelerates, enhancing energy density has turn into key to success, and the right way to enhance effectivity and energy density for power storage purposes has attracted a lot consideration. Infineon’s CoolSiC MOSFET 1200 V and IGBT7 H7 1200 V collection energy semiconductor gadgets undertake the newest semiconductor applied sciences and design ideas which can be tailor-made to industrial purposes.
Mr. Yu Daihui, Senior Vice President and Head of Industrial & Infrastructure of Infineon Applied sciences Higher China stated, “As an trade chief in energy semiconductors, we’re proud to work carefully with FOXESS. We’ll proceed to drive decarbonization by enabling increased energy density and extra dependable techniques for PV-ES purposes.”
Mr. Zhu Jingcheng, Chairman of FOXESS, stated, “Because of the assist of Infineon’s superior parts, FOXESS’ merchandise have been considerably improved when it comes to reliability and effectivity. This has been an essential driving power for FOXESS’ development. Infineon’s technical assist and product high quality haven’t solely strengthened our competitiveness, but additionally expanded our presence available in the market. We’re assured concerning the future and sit up for additional cooperation with Infineon to collectively promote the event of the trade and create better worth for our clients.”
With a excessive energy density, Infineon’s CoolSiC MOSFETs 1200 V can cut back losses by 50 % and supply ~2 % further power with out rising the battery dimension, which is particularly helpful for high-performance, light-weight, and compact power storage options. FOXESS’ H3PRO 15 kW-30 kW power storage collection makes use of Infineon’s CoolSiC MOSFETs 1200 V for all fashions. Because of Infineon’s glorious efficiency, the H3PRO collection has achieved an effectivity of as much as 98.1 % and glorious EMC efficiency; with superior efficiency and reliability, the H3PRO collection has seen speedy gross sales development within the world market.
Infineon’s TRENCHSTOP IGBT7 H7 650 V / 1200 V collection has decrease losses and helps enhance the general effectivity and energy density of inverters. In high-power inverter initiatives, high-current mould packaged discrete gadgets with present dealing with functionality above 100 A can cut back the variety of IGBTs in parallel and change the IGBT module resolution, additional enhancing system reliability and lowering prices; as well as, the H7 collection has turn into an trade benchmark for its high-quality efficiency and better resistance to humidity. At current, FOXESS’ most important industrial and business mannequin, the R Sequence 75-110 kW, redefines the general design of the 100 kW mannequin by utilizing IGBT7 H7 collection discretes, and the effectivity of the entire machine can attain as much as 98.6 %. Because of the low energy loss and excessive energy density of the IGBT7 H7 collection in discrete packages, technical issues comparable to present sharing within the paralleling course of will be simplified and optimized.
Each energy system wants a driver, and the best driver could make the design loads simpler. Infineon gives greater than 500 EiceDRIVER gate drivers with typical output currents of 0.1 A~18 A and complete safety features together with quick short-circuit safety (DESAT), energetic Miller clamp, shoot-through safety, fault reporting, shutdown, and overcurrent safety, appropriate for all energy gadgets together with CoolSiC and IGBTs.
