Infineon pronounces CoolGaN bidirectional change and CoolGaN Sensible Sense for greater efficiency and less expensive energy methods

Infineon Applied sciences AG at present introduced two new CoolGaN product applied sciences, CoolGaN bidirectional change (BDS) and CoolGaN Sensible Sense. CoolGaN BDS supplies distinctive soft- and hard-switching habits, with bidirectional switches out there at 40 V, 650 V and 850 V. Goal Purposes of this household embrace cell gadget USB ports, battery administration methods, inverters, and rectifiers. The CoolGaN Sensible Sense merchandise function lossless present sensing, simplifying design and additional lowering energy losses, in addition to transistor change features built-in into one bundle. They are perfect for utilization in client USB-C chargers and adapters.

The CoolGaN BDS excessive voltage will probably be out there at 650 V and 850 V and have a real normally-off monolithic bi-directional change with 4 modes of operation. Primarily based on the gate injection transistor (GIT) expertise, the units have two separate gates with substrate terminal and impartial remoted management. They make the most of the identical drift area to dam voltages in each instructions with excellent efficiency below repetitive short-circuit situations. Purposes can profit through the use of one BDS as an alternative of 4 typical transistors, leading to greater effectivity, density, and reliability. Moreover, important price financial savings are achieved. The units optimize efficiency within the substitute of back-to-back switches in single-phase H4 PFC and HERIC inverters and three-phase Vienna rectifiers. Further implementations embrace single-stage AC energy conversion in AC/DC or DC/AC topologies.

The CoolGaN BDS 40 V is a normally-off, monolithic bi-directional change based mostly on Infineon’s in-house Schottky Gate GaN expertise. It may well block voltages in each instructions, and thru a single-gate and common-source design, it’s optimized to exchange back-to-back MOSFETs used as disconnect switches in battery-powered client merchandise. The primary 40 V CoolGaN BDS product has a 6 mΩ R_DS(on), with a spread of merchandise to comply with. Advantages of utilizing 40 V GaN BDS vs. back-to-back Si FETs embrace 50 – 75 p.c PCB space financial savings and a discount of energy losses by greater than 50 p.c, all at a decrease price.

The CoolGaN Sensible Sense merchandise function 2 kV electrostatic discharge face up to and may hook up with controller present sense for peak present management and overcurrent safety. The present sense response time is ~200 ns, which is equal or lower than frequent controller blanking time for final compatibility.

Implementing the units leads to elevated effectivity and value financial savings. At the next R_DSs(on) of e.g. 350 mΩ, the CoolGaN Sensible Sense merchandise provide related effectivity and thermal efficiency at decrease price in comparison with conventional 150mΩ GaN transistors. Furthermore, the units are footprint suitable to Infineon’s transistor-only CoolGaN bundle, eliminating the necessity for structure rework and PCB respin, and additional facilitating design with Infineon’s GaN units.

Availability

Engineering samples of the CoolGaN BDS 40 V can be found now for six mΩ and can comply with in Q3 2024 for 4 mΩ and 9 mΩ. Samples of the CoolGaN BDS 650 V will probably be out there in This autumn 2024, and 850 V will comply with early 2025. CoolGaN Sensible Sense samples will probably be out there in August 2024. Additional info is accessible right here: https://www.infineon.com/cms/en/product/promopages/GaN-innovations/