Infineon extends radiation-hardened reminiscence portfolio with business’s first area certified parallel interface 1 and a pair of Mb F-RAMs

House-based functions are an essential space for Infineon Applied sciences AG, with the corporate’s merchandise being utilized in satellites, mars rover devices and area telescopes, all of which require the best reliability even underneath probably the most adversarial situations. Infineon at present introduced the provision of the business’s first radiation-hardened (rad-hard) 1 and a pair of Mb parallel interface ferroelectric-RAM (F-RAM) nonvolatile reminiscence units. These additions to Infineon’s in depth portfolio of reminiscences function unsurpassed reliability and endurance, with as much as 120 years of information retention at 85 levels Celsius, together with random entry and full reminiscence write at bus speeds.

Infineon F-RAM units are intrinsically rad-hard, and the expertise is ideally fitted to the evolving mission necessities of space-based functions that traditionally have used slower, much less rugged EEPROM nonvolatile storage units. Options in comparison with alternate options embody sooner reminiscence random entry, higher information safety with immediate non-volatile write expertise and low energy, with extraordinarily low programming voltage right down to 2 V and most working present of 20 mA.

“As more room functions are architected to course of information on-system, and never on-ground by way of telemetry, there’s growing demand for high-reliability non-volatile reminiscence to work in tandem with space-grade processors and FPGAs for data-logging functions,” mentioned Helmut Puchner, Vice President, Fellow Aerospace and Protection, Infineon Applied sciences. “Infineon launched the primary SPI F-RAM units for this market in 2022, and the addition of parallel interface units displays our dedication to delivering best-in-class, extremely dependable and versatile options for next-generation area necessities.”

Goal functions for Infineon’s rad-hard F-RAM units embody information storage for sensors and devices, information logging for calibration information, safe key storage for information encryption, and boot code storage. Along with outer area, they’re additionally appropriate for avionic and different functions that require navy normal temperature grades (-55°C to 125°C).

Just like the SPI model, the chemical composition of the brand new Infineon parallel interface F-RAM units leads to distinctive non-volatile reminiscence options, together with instantaneous switching of atomic state, as an alternative of a trapped cost to program bits in EEPROM applied sciences. F-RAM is inherently resistant to mushy errors and magnetic area or radiation results. There isn’t any requirement for software program to handle web page boundaries, and near-infinite endurance (10¹³ write cycles) means there isn’t any want for put on levelling.

The parallel units are packaged in 44-lead ceramic TSOP and the QML-V certified units have superior radiation efficiency of:

• TID: >150 Krad (Si)
• SEL: >96 MeV·cm ²/mg @115°C
• SEU: Immune
• SEFI: <1.34 * 10-4 err / dev.day (energetic/standby) / Immune (sleep mode)

Availability

The entire portfolio of rad-hard F-RAM non-volatile reminiscences, together with 2 Mb SPI and 1 and a pair of Mb parallel units, is offered now. Extra info is offered at www.infineon.com/1and2MbFRAM.