Vishay Intertechnology 600 V E Collection Energy MOSFET in Compact High-Facet Cooling PowerPAK® 8 x 8LR Delivers Trade’s Lowest RDS(ON)*Qg FOM

Fourth-Era Gadget Allows Greater Energy Scores and Density Versus D²PAK Whereas Decreasing Conduction and Switching Losses to Improve Effectivity

To supply larger effectivity and energy density for telecom, industrial, and computing functions, Vishay Intertechnology, Inc. at the moment launched its first fourth-generation 600 V E Collection energy MOSFET within the new PowerPAK 8 x 8LR package deal. In comparison with previous-generation gadgets, the Vishay Siliconix n- channel SiHR080N60E slashes on-resistance by 27 % and resistance instances gate cost, a key determine of benefit (FOM) for 600 V MOSFETs utilized in energy conversion functions, by 60 % whereas offering larger present in a smaller footprint than gadgets within the D²PAK package deal.

Vishay affords a broad line of MOSFET applied sciences that assist all phases of the ability conversion course of, from excessive voltage inputs to the low voltage outputs required to energy the most recent excessive tech gear. With the SiHR080N60E and different gadgets within the fourth-generation 600 V E Collection household, the corporate is addressing the necessity for effectivity and energy density enhancements in two of the primary phases of the ability system structure — energy issue correction (PFC) and subsequent DC/DC converter blocks. Typical functions will embody servers, edge computing, tremendous computer systems, and knowledge storage; UPS; excessive depth discharge (HID) lamps and fluorescent ballast lighting; telecom SMPS; photo voltaic inverters; welding gear; induction heating; motor drives; and battery chargers.

Measuring 10.42 mm by 8 mm by 1.65 mm, the SiHR080N60E’s compact PowerPAK 8 x 8LR package deal includes a 50.8 % smaller footprint than the D²PAK whereas providing a 66 % decrease peak. Resulting from its top-side cooling, the package deal delivers glorious thermal functionality, with a particularly low junction to case (drain) thermal resistance of 0.25 °C/W. This permits for 46 % larger present than the D²PAK on the identical on-resistance degree, enabling dramatically larger energy density. As well as, the package deal’s gullwing leads present glorious temperature cycle functionality.

Constructed on Vishay’s newest energy-efficient E Collection superjunction expertise, the SiHR080N60E options low typical on-resistance of 0.074 Ω at 10 V and extremely low gate cost right down to 42 nC. The ensuing FOM is an industry-low 3.1 Ω*nC, which interprets into lowered conduction and switching losses to save lots of vitality and improve effectivity in energy methods > 2 kW. For improved switching efficiency in hard-switched topologies resembling PFC, half-bridge, and two-switch ahead designs, the MOSFET launched at the moment supplies low typical efficient output capacitances Co(er) and Co(tr) of 79 pF and 499 pF, respectively. The package deal additionally supplies a Kelvin connection for improved switching effectivity.

The system is RoHS-compliant and halogen-free, and it’s designed to resist overvoltage transients in avalanche mode with assured limits by means of 100 % UIS testing.

Samples and manufacturing portions of the SiHR080N60E can be found now. For lead time info, please contact your native gross sales workplace.