Texas Devices expands inside manufacturing for gallium nitride (GaN) semiconductors, quadrupling capability

Utilizing essentially the most superior GaN manufacturing expertise obtainable immediately, Aizu, Japan, is now the corporate’s second manufacturing unit to provide an entire portfolio of GaN-based energy semiconductors

NEWS HIGHLIGHTS:

• TI provides GaN manufacturing in Japan, quadrupling its inside GaN manufacturing capability between its factories in the US and Japan.
• TI’s GaN-based semiconductors are in manufacturing and obtainable now.
• TI permits essentially the most energy-efficient, dependable and power-dense finish merchandise with the widest portfolio of built-in GaN-based energy semiconductors.
• TI has efficiently piloted the event of GaN manufacturing on 300mm wafers.

Texas Devices has introduced it has begun manufacturing of gallium nitride (GaN)-based energy semiconductors at its manufacturing unit in Aizu, Japan. Coupled with its current GaN manufacturing in Dallas, Texas, TI will now internally manufacture 4 instances extra GaN-based energy semiconductors, as Aizu ramps to manufacturing.

“Constructing on greater than a decade of experience in GaN chip design and manufacturing, now we have efficiently certified our 200mm GaN expertise – essentially the most scalable and cost-competitive option to manufacture GaN immediately – to start out mass manufacturing in Aizu,” stated Mohammad Yunus, TI’s senior vice chairman of Know-how and Manufacturing. “This milestone permits us to fabricate extra of our GaN chips internally as we develop our inside manufacturing to greater than 95% by 2030, whereas additionally sourcing from a number of TI places, guaranteeing a dependable provide of our total GaN portfolio of high-power, energy-efficient semiconductors.”

The facility of GaN expertise

A substitute for silicon, GaN is a semiconductor materials that provides advantages in energy-efficiency, switching velocity, energy resolution measurement and weight, total system value, and efficiency beneath excessive temperatures and high-voltage circumstances. GaN chips present extra energy density, or energy in smaller areas, enabling purposes resembling energy adapters for laptops and cell phones, or smaller, extra energy-efficient motors for heating and air-con programs and residential home equipment.

Right now, TI affords the widest portfolio of built-in GaN-based energy semiconductors, starting from low- to high-voltage, to allow essentially the most energy-efficient, dependable and power-dense electronics.

“With GaN, TI can ship extra energy, extra effectively in a compact area, which is the first market want driving innovation for a lot of of our clients,” stated Kannan Soundarapandian, vice chairman of Excessive-Voltage Energy at TI. “As designers of programs resembling server energy, photo voltaic vitality technology and AC/DC adapters face challenges to cut back energy consumption and improve vitality effectivity, they’re more and more demanding a dependable provide of TI’s high-performance GaN-based chips. TI’s product portfolio of built-in GaN energy levels permits clients to attain larger energy density, improved ease of use and decrease system value.”

Additional, with the corporate’s proprietary GaN-on-silicon course of, greater than 80 million hours of reliability testing, and built-in safety options, TI GaN chips are designed to maintain high-voltage programs secure.

Most superior GaN manufacturing expertise obtainable immediately

Utilizing essentially the most superior tools obtainable for GaN chip manufacturing immediately, TI’s new capability permits elevated product efficiency and manufacturing course of effectivity, in addition to a price benefit.

Additionally, the extra superior, environment friendly instruments utilized in TI’s expanded GaN manufacturing can produce smaller chips, packing much more energy. This design innovation could be manufactured utilizing much less water, vitality and uncooked supplies, and finish merchandise that use GaN chips take pleasure in these identical environmental advantages.

Scaled for future advances

The efficiency advantages of TI’s added GaN manufacturing additionally allow the corporate to scale its GaN chips to larger voltages, beginning with 900V and growing to larger voltages over time, furthering power-efficiency and measurement improvements for purposes like robotics, renewable vitality and server energy provides.

As well as, TI’s expanded funding features a profitable pilot earlier this yr for growth of GaN manufacturing processes on 300mm wafers. Additional, TI’s expanded GaN manufacturing processes are totally transferable to 300mm expertise, positioning the corporate to readily scale to buyer wants and transfer to 300mm sooner or later.

Dedicated to accountable, sustainable manufacturing

Increasing provide and innovation in GaN expertise is the most recent instance of TI’s dedication to accountable, sustainable manufacturing. TI has dedicated to make use of 100% renewable electrical energy in its U.S. operations by 2027, and worldwide by 2030.