GaN-based QR Adaptor Reference Design

This design fits laptops, smartphones, and different USB-C-powered gadgets, highlighting its superior vitality effectivity, compact type issue, and compliance with worldwide EMI requirements.

Excessive-efficiency energy adapters are important in fashionable electronics, enabling compact and energy-saving options for client and industrial purposes. Gallium Nitride (GaN) transistors have reworked the ability trade by delivering excessive energy density and effectivity, making them ideally suited for light-weight, high-performance adapters. The GS-EVB-ADP-65WQR-GS1, a 65W USB-C AC-DC adapter from GaN Methods Inc, exemplifies some great benefits of GaN-based energy conversion. 

The GS-EVB-ADP-65WQR-GS1 by GAN Methods makes use of the high-performance 650V, 150mΩ GaN transistor (GS-065-011-1-L) for optimized energy conversion. The adapter achieves a peak effectivity exceeding 93.6% and boasts a outstanding energy density of 18.5W/in³ in a cased design. It additionally meets EMI EN55032 Class B requirements for each carried out and radiated emissions, guaranteeing its reliability in varied environments. Moreover, the design surpasses CoC Ver5 Tier 2 requirements for common effectivity and standby energy consumption, making it a aggressive alternative for environmentally aware, high-performance energy provides.

The circuit structure of this reference design highlights the efficiency capabilities of GaN transistors. On the first aspect, the GaN transistor works with the NCP1342 Quasi-Resonant (QR) controller, guaranteeing environment friendly vitality conversion. On the secondary aspect, a 100V Si MOSFET with the NCP4306 synchronous rectification (SR) controller is utilised for efficient rectification. A devoted Energy Supply (PD) protocol controller additionally ensures USB-C compatibility, making the adapter appropriate for a variety of gadgets. This structure offers sturdy efficiency whereas sustaining compact dimensions.

The design complies with EMI EN55032 Class B requirements, with margins of 10dB for carried out EMI and 6dB for radiated EMI, examined at 230V and 110V AC inputs. Thermal efficiency is equally spectacular; after half-hour of full-load operation at an ambient temperature of roughly 25°C, the PCB temperature stays beneath 100°C, whereas the utmost temperature on the cased adapter’s floor doesn’t exceed 66°C. These metrics underline the design’s operational stability and effectivity.

This reference design showcases the potential of GaN transistors in compact, high-performance USB-C adapters. Functions embrace quick chargers for client electronics, industrial controllers, and environment friendly energy provides for IoT gadgets. By leveraging GaN expertise, the design achieves distinctive energy density, vitality effectivity, and compliance with worldwide requirements, making it a useful useful resource for design engineers creating next-generation energy adapters.

GAN Methods has examined this reference design. It comes with a invoice of supplies (BOM), schematics, meeting drawing, printed circuit board (PCB) structure, and extra. The corporate’s web site has extra information concerning the reference design. To learn extra about this reference design, click on right here.