5 kW Remoted DC-DC Energy Provide Reference Design

A 5 kW bi-directional DC-DC converter gives excessive effectivity and energy dealing with, appropriate for EV charging and photovoltaic inverters utilizing the DAB technique.

Toshiba’s 5 kW Remoted Bidirectional DC-DC Converter reference design is able to delivering as much as 5 kW of energy. It may well switch voltage from the high-voltage aspect to the low-voltage aspect or vice versa. Using the Twin Lively Bridge (DAB) technique, it emphasizes effectivity via a full-bridge configuration on either side, permitting it to deal with greater energy in comparison with the half-bridge technique. The DAB technique permits mushy switching through section shifting, leading to a extremely environment friendly DC-DC converter appropriate for varied industrial functions, corresponding to electrical automobile (EV) charging methods and photovoltaic energy technology inverters.

The high-voltage enter/output is designed for 750 V, requiring parts that may face up to switching voltages of 1000 V or greater. Usually, an IGBT could be chosen, however as a consequence of its important switching losses, enhancements in effectivity are restricted. As a substitute, the design employs the TW070J120B, a 1200 V SiC MOSFET, to attain each high-power and high-efficiency conversions. On the low-voltage aspect, with a 400 V enter/output, the TK49N65W5—a 650 V MOSFET with decreased switching losses as a consequence of its tremendous junction construction and built-in high-speed diode—is used to make sure excessive effectivity.

The gate driver incorporates a 4 A sink-source present functionality, adequately driving the gate charging/discharging present when switching the 1200 V SiC MOSFET. It makes use of the good gate driver coupler TLP5214A, which incorporates overcurrent safety and a UVLO operate. For the voltage-sensor circuitry requiring isolation, an optically coupled isolation amplifier, TLP7920, with excessive linearity accuracy and excessive common-mode transient immunity, is employed.

Among the key options of the reference design embody:

• Excessive Voltage Facet: DC 732V to 768V
• Low Voltage Facet: DC 396V to 404V
• Rated Energy: 5.0kW
• Circuit topology: Twin Lively Bridge（DAB）Conversion Methodology

The design of the gate drive circuit considerably impacts energy provide effectivity and EMI noise. Usually, there’s a trade-off between energy provide effectivity and EMI noise, requiring a balanced design strategy. The ability provide’s gate-drive circuit permits for adjustable MOSFET switching pace. To cut back noise at MOSFET turn-on, rising the gate sequence resistor might assist scale back EMI noise. Nevertheless, this variation may also scale back each turn-on and turn-off speeds of the MOSFET, doubtlessly decreasing energy provide effectivity. To mitigate effectivity degradation, solely the MOSFET turn-off pace needs to be elevated by reducing the gate sequence resistor.. This adjustment might improve turn-off pace and enhance system effectivity. When altering the gate sequence resistance, it’s important to make sure that the system’s EMI noise, energy effectivity, and warmth dissipation efficiency necessities are met.

Toshiba has examined this reference design. It comes with a invoice of supplies (BOM), schematics, meeting drawing, printed circuit board (PCB) format, and so forth. You could find extra information in regards to the reference design on the corporate’s web site. To learn extra about this reference design, click on right here.