3-Section Reference Design For SiC Module

The three-phase design helps develop energy electronics with gate drivers, fault detection, isolation, SPI communication, and compliance with security requirements.

RDGD31603PHSEVM is a three-phase reference design from NXP Semiconductors outfitted with six GD3160 gate drivers for IGBT/SiC MOSFET gadgets. The design simplifies the event and testing of energy electronics programs, facilitating system configuration and efficiency assessments resembling SC or double pulse assessments on a single part with out customized software program. By adopting a reference design for a selected inverter software, engineers can cut back the time to market. Utilizing this reference design, the designers can cut back general system prices.

The great analysis platform encompasses a whole three-phase inverter system, together with six gate drivers with sturdy fault administration and extra assist circuits. It options programmable and communicable capabilities by means of SPI daisy chain communication, permitting separate concentrating on of three high-side and three low-side gate drivers.

The board integrates low-voltage and high-voltage isolation and offers galvanic sign isolation particular to the gate drivers. It helps varied functionalities, resembling desaturation short-circuit detection, temperature monitoring for IGBT/SiC gadgets, DC hyperlink bus voltage monitoring, part present sensing, and circuits designed for motor resolver excitation and sign processing.

Working from a 12 V DC major energy supply, usually a car battery, the low-voltage area powers nonisolated circuits and facilitates the interplay between the MCU and the GD3160 management registers alongside the logic management.

The board’s structure consists of remoted high-voltage management areas for low-side and high-side driver domains tailor-made for SiC MOSFET or IGBT single-phase connections and their respective management circuits. It additionally options straightforward connectivity choices for appropriate three-phase SiC MOSFET or IGBT modules.

Key options of the gate driver embody {an electrical} isolation functionality of as much as 8,000 volts to reinforce security and sturdy output dealing with as much as 15 amperes for environment friendly switching operations. It helps SPI communication for real-time system standing updates, configuration changes, and diagnostic features. Security mechanisms are in place to allow fast and protected shutdowns throughout emergencies in each low- and high-voltage domains.

Moreover, the motive force is appropriate with varied temperature sensors for complete security checks and incorporates settings to mitigate overcurrent situations vital for SiC and IGBT semiconductors. It permits for managed power-down sequences, important for successfully managing these semiconductors. The gate driver is out there in numerous variations to accommodate various operational voltages and complies with ISO 26262, guaranteeing adherence to the best security requirements.

NXP has examined this reference design. It comes with a invoice of supplies (BOM), schematics, meeting drawing, printed circuit board (PCB) format, and extra. The corporate’s web site has extra information in regards to the reference design. To learn extra about this reference design, click on right here.